* 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
* Low Gate Charge (3.3 nC)
* High Performance Trench Technology for Extremely .

* DC/DC Converter
* Battery Protection
* Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwi.

This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switch.

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